r 201412c 1/8 n ??? n-channel mosfet JCS9N90WT order codes ? marking ? package halogen free ? packaging device weight JCS9N90WT-o-w-n-b JCS9N90WT to- 247 no tube 5.20g(typ) ? package ? main characteristics i d 9 a v dss 900 v rdson @vgs=10v 1.35 ? qg 43 nc ? z ??? z z led ? applications z high efficiency switch mode power supplies z electronic lamp ballasts based on half bridge z led power supplies ? z ? z c rss ( ? 13pf) z ?? z ??? z ? dv/dt z rohs ? features z low gate charge z low c rss (typical 13pf ) z fast switching z 100% avalanche tested z improved dv/dt capability z rohs product ? order message
r JCS9N90WT 201412c 2/8 ?? absolute ratings (tc=25 ) * ?? *drain current limited by maximum junction temperature ? value ? parameter symbol jcs9n90ct unit ???? drain-source voltage v dss 900 v 9 a ? drain current -continuous i d t=25 t=100 6.0* a ? ? 1 drain current - pulse note 1 i dm 36 a ??? gate-source voltage v gss 30 v ? ? 2 single pulsed avalanche energy note 2 e as 858 mj ? ? 1 avalanche current note 1 i ar 9 a ?? ? 1 repetitive avalanche current note 1 e ar 27.7 mj ??? ? 3 peak diode recovery dv/dt note 3 dv/dt 4.1 v/ns 160 160 w ? power dissipation p d t c =25 -derate above 25 1.28 w/ ??? operating and storage temperature range t j t stg -55 +150 ?? maximum lead temperature for soldering purposes t l 300
r JCS9N90WT 201412c 3/8 electrical characteristics ? parameter symbol tests conditions min typ max units ? off ?characteristics ??? drain-source voltage bv dss i d =250 a, v gs =0v 900 - - v ?? breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0.98 - v/ v ds =900v,v gs =0v, t c =25 - - 1 a ???? zero gate voltage drain current i dss v ds =720v, t c =125 - - 10 a ?? gate-body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate-body leakage current, reverse i gssr v ds =0v, v gs =-30v - - -100 na ?? on-characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 3.0 - -----5.0-----v ?? static drain-source on-resistance r ds(on) v gs =10v , i d =4.5a - 1.18 1.35 ? forward transconductance g fs v ds = 40v, i d =4.5a note 4 - 9.5 - s ? dynamic characteristics input capacitance c iss - 2150 2830 pf output capacitance c oss - 189 246 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mh z - 13 17 pf
r JCS9N90WT 201412c 4/8 electrical characteristics thermal characteristic switching characteristics ?? turn-on delay time t d (on) - 53 121 ns ? turn-on rise time t r - 116 235 ns ?? turn-off delay time t d (off) - 97 199 ns ?? turn-off fall time t f v dd =450v,i d =9a,r g =25 ? note 4 5 - 69 171 ns ? total gate charge q g - 43 56 nc ?? gate-source charge q gs - 15 - nc ?? gate-drain charge q gd v ds =720v , i d =9a v gs =10v note 4 5 - 21 - nc ????? drain-source diode characteristics and maximum ratings maximum continuous drain -source diode forward current i s - - 9 a maximum pulsed drain-source diode forward current i sm - - 36 a ? drain-source diode forward voltage v sd v gs =0v, i s =9a - - 1.4 v ?? reverse recovery time t rr - 539 - ns ? reverse recovery charge q rr v gs =0v, i s =9a di f /dt=100a/ s (note 4) - 6.41 - c max ? parameter symbol JCS9N90WT unit ??? thermal resistance, junction to case r th(j-c) 0.45 /w ? thermal resistance, junction to ambient r th(j-a) 40 /w ?? 1 ? 2 l=20mh, i as =9a, v dd =50v, r g =25 ? , ? t j =25 3 i sd 9a,di/dt 200a/ s,vdd bv dss , ? t j =25 4 ? 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l=20mh, i as =9a, v dd =50v, r g =25 ? ,starting t j =25 3 i sd 9a,di/dt 200a/ s,vdd bv dss , starting t j =25 4 pulse test pulse width 300 s,duty cycle 2 5 essentially independent of operating temperature
r JCS9N90WT 201412c 5/8 electrical characteristics (curves) 110 1 10 v gs top 15v 10v 9v 8v 7v 6.5v 6v 5.5v bottom 5v notes: 1. 250 s pulse test 2. t c =25 i d [a] v ds [v] 246810 0.1 1 10 notes: 1.250 s pulse test 2.v ds =40v 25 i d [a] v g s [v] 150 02468101214 1.0 1.2 1.4 1.6 note:t j =25 v gs =10v v gs =20v r ds ( on ) [ ? ] i d [a] 0.1 1 10 0.20.30.40.50.60.70.80.91.01.11.21.31.41.5 notes: 1. 250 s pulse test 2. v gs =0v 25 150 v s d [v] i d r [a] 10 -1 10 0 10 1 0 1x10 3 2x10 3 3x10 3 c rss c oss c iss c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance [pf] v d s drain-source voltage [v] 0 2 4 6 8 10 12 010203040 v ds =720v v ds =450v v ds =180v q g toltal gate charge [nc] v gs gate source voltage[v] on-region characteristics transfer characteristics on-resistance variation vs. drain current and gate voltage body diode forward voltage v ariation vs. source current and temperature capacitance characteristics gate charge characteristics
r JCS9N90WT 201412c 6/8 electrical characteristics (curves) -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 notes: 1. v g s = 0v 2. i d = 250 a bv ds (normalized) t j [] -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 notes: 1. v gs =10v 2. i d =4.5a r d ( on ) (normalized) t j [] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 operation in this area is limited by r ds(on) note: 1 t c =25 2 t j =150 3 single pulse 10 s 1ms 100 s 10ms 100ms dc i d drain current [a] v ds drain-source voltage [v] 25 50 75 100 125 150 0 2 4 6 8 10 i d drain current [a] t c case temperature [ ] 1e-5 1e-4 1e-3 0.01 0.1 1 10 0.01 0.1 1 t 2 t 1 d=0.5 0.2 0.1 0.05 0.02 z jc (t) thermal response t 1 square w ave pulse d uration [sec] single pulse 0.01 notes: 1 z jc (t)= 0 .4 5 /w m a x 2 duty factor, d=t 1 /t 2 3 t jm -t c =p dm * z jc (t) p dm breakdown voltage variation vs. temperature on-resistance variation vs. temperature maximum drain current vs. case temperature maximum safe operating area transient thermal response curve
r jcs 9n90wt 201412c 7/8 ? package mechanical data to-247 unit mm
r JCS9N90WT 201412c 8/8 ? 1. ????????? ?????? ???? 2. ????? ?? 3. ????? ?????? 4. ??? note 1. jilin sino-microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don?t be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino-microelectronics co., ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86-432-64678411 86-432-64665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86-432-64675588 64675688 64678411-3098/3099 : 86-432-64671533 contact jilin sino-microelectronics co., ltd. add: no.99 shenzhen str eet, jilin city, jilin province, china. post code: 132013 te l 86-432-64678411 fax 86-432-64665812 web site www.hwdz.com.cn market department add: no.99 shenzhen str eet, jilin city, jilin province, china. post code: 132013 tel: 86-432-64675588 64675688 64678411-3098/3099 fax: 86-432-64671533
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